Plasma-Assisted Nitrogen Doping of Langmuir–Blodgett Self-Assembled Graphene Films

Graphene films prepared from solution and deposited by Langmuir–Blodgett self-assembly technique (LBSA) were treated with radio-frequency (13.56 MHz) nitrogen plasma in order to investigate the influence of time exposure on work function, sheet resistance, surface morphology LBSA graphene films. Kelvin probe force microscopy resistance measurements confirm functionalization our films, Fermi level shifting a direction that indicates binding pyridinic and/or pyrrolic site. Upon 1 min exposure, decreases there is no obvious difference film morphology. However, longer than 5 leads removal flakes degradation turn, affecting flake connectivity increasing resistance. We show changing time, we can control function decrease without Controllability has an advantage for over conventional doping techniques such as chemical drop-casting. It allows controllable tuning morphology, which substantial applications various optoelectronic devices.